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  savantic semiconductor product specification silicon pnp power transistors 2SB870 description with t o-220c package complement to type 2sd866 low collector saturation voltage high collector current capability applications for power switching applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -130 v v ceo collector-emitter voltage open base -80 v v ebo emitter-base voltage open collector -7 v i c collector current (dc) -7 a i cm collector current-peak -15 a p c collector dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -50~150 fig.1 simplified outline (to-220) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2SB870 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma; i b =0 -80 v v cesat collector-emitter saturation voltage i c =-5a; i b =-0.25a -0.5 v v besat base-emitter saturation voltage i c =-5a; i b =-0.25a -1.5 v i cbo collector cut-off current v cb =-100v; i e =0 -10 a i ebo emitter cut-off current v eb =-5v; i c =0 -50 a h fe-1 dc current gain i c =-0.1a ; v ce =-2v 45 h fe-2 dc current gain i c =-3a ; v ce =-2v 60 260 f t transition frequency i c =-0.5a ; v ce =-10v 30 mhz switching times t on turn-on time 0.1 s t stg storage time 0.8 s t f fall time i c =-3a ; i b1 =-i b2 =-0.3a 0.1 s  h fe-2 classifications r q p 60-120 90-180 130-260 downloaded from: http:///
savantic semiconductor product specification 3 silicon pnp power transistors 2SB870 package outline fig.2 outline dimensions (unindicated tolerance:0.10mm) downloaded from: http:///


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